The thermal and optical emission processes of electrons and holes from EL2 were investigated by means of isothermal capacitance transient spectroscopy. The thermal emission process of holes from EL2 was observed for the first time by using an Al/p-GaAs Schottky barrier junction. From a comparison of dark- and photo- isothermal capacitance transient spectroscopic data for n- and p-type material, the electron occupation function of EL2 in the depletion region at the junction was estimated to be 0.08. This result was concluded to be important when considering the formation mechanism of EL2, as well as the relationship between EL2 and other defect states.

H.Okushi, T.Sekiguchi, Y.Tokumaru, K.Sumino: Materials Science Forum, 1995, 196-201, 261-6