Antiphase domain-free material was grown, by means of molecular beam epitaxy, onto (100)Si substrates with an offset angle of 0.3, without the use of conventional high-temperature pre-treatment. The use of reflection high-energy electron diffraction demonstrated the presence of a double-domain reconstruction on the 0.3-misoriented Si substrate after pre-treatment at 400 to 600C. However, GaAs epitaxial layers which were grown onto these substrates by using the 2-step method were antiphase domain-free. The use of etching with KOH, and double-crystal X-ray diffraction, showed that the crystalline quality of the GaAs which had been grown onto the epitaxial Si substrate was comparable to that of GaAs which was grown onto conventional Si substrates that had been heat-treated at 900C. The use of atomic force microscopy showed that the surface flatness of GaAs layers which had been grown onto 0.3-misoriented epi-substrates was far superior to that grown onto an epi-substrate with a 2 offset.

W.Y.Uen, T.Ohori, T.Nishinaga: Journal of Crystal Growth, 1995, 156[3], 133-9