A study was made of the reduction in dislocation density of molecular beam epitaxial GaAs on Si, grown with a GaSb intermediate layer, that was effected by thermal-cycle annealing. The effects of the annealing temperature upon the crystal quality of the upper GaAs layer on Si were analyzed on the basis of the results of etch-pit density and transmission electron microscopic data. Etch-pit densities, of the upper GaAs layer, which were as low as 8.5 x 106/cm2 were obtained when the maximum annealing temperature was 900C. This was higher than the melting point of the intermediate GaSb layer.

H.Uchida, T.Soga, H.Nishikawa, T.Jimbo, M.Umeno: Journal of Crystal Growth, 1995, 150[1-4], 681-4