An investigation was made of the suppression of threading dislocation generation in GaAs on Si(100), with strained short-period superlattices, by means of reflection high-energy electron diffraction and transmission electron microscopy. A 2-dimensional growth mode was maintained during the lattice relaxation process. As a result, the density of threading dislocations within the GaAs epilayer was markedly reduced. A lattice mismatch of 4% was accommodated at hetero-interfaces by the generation of misfit dislocations in <011> directions.

Y.Takagi, H.Yonezu, T.Kawai, K.Hayashida, K.Samonji, N.Ohshima, K.Pak: Journal of Crystal Growth, 1995, 150[1-4], 677-80