Films of GaInAs were deposited onto semi-insulating Ga1-xInxAs, where x ranged from 0.04 to 0.05. Under nearly lattice-matched conditions, the films which were grown onto GaInAs substrates had a smooth surface morphology; as compared with a dislocation-induced cross-hatched morphology on GaAs substrates. The GaInAs film photoluminescence intensity was stronger with a narrower X-ray line-width, due to the elimination of lattice mismatch dislocations.

W.E.Hoke, P.S.Lyman, J.R.Carter, H.T.Hendriks, W.A.Bonner, B.Lent: Journal of Vacuum Science and Technology B, 1995, 13[2], 678-80