The temperature dependence of the cathodoluminescence which originated from Ga0.79In0.21As/GaAs multiple quantum-wells was studied at temperatures of between 86 and 250K. The cathodoluminescence intensity exhibited an Arrhenius-type dependence upon temperature which was characterized by 2 different activation energies. The effects, of misfit dislocations and point defects that were associated with strain relaxation, upon the thermal quenching of luminescence was investigated, and the spatial variation in activation energies was determined. It was found that the dependence of the cathodoluminescence intensity upon temperature at up to 150K was controlled by thermally activated non-radiative recombination. At temperatures above 150K, the decrease in cathodoluminescence intensity was affected largely by the thermal re-emission of carriers from quantum wells.

K.Rammohan, H.T.Lin, D.H.Rich, A.Larsson: Journal of Applied Physics, 1995, 78[11], 6687-90