The relationship between surface morphology and strain relaxation was explored in strained GaInAs layers which had been grown onto GaAs by means of molecular beam epitaxy. The use of  in situ  light-scattering, monitored simultaneously along [110] and [11¯0], revealed an asymmetrical surface roughening which was consistent with scanning force microscopic observations. In the case of Ga0.82In0.18As films which had been grown at 490C, transmission electron microscopy showed that strain relaxation via misfit dislocation formation occurred before surface roughening was detected.

C.Lavoie, T.Pinnington, E.Nodwell, T.Tiedje, R.S.Goldman, K.L.Kavanagh, J.L.Hutter: Applied Physics Letters, 1995, 67[25], 3744-6