Misfit dislocations at the interfaces of 2 different Ga0.91In0.09As/GaAs(001) heterostructures were analyzed by means of transmission electron microscopy, using plan-view and cross-sectional specimens. The structures exhibited 60-type misfit dislocations, with a ½<110>{111} slip system. The spacing of the misfit dislocations was measured at individual interfaces in the heterostructures. Tetragonal distortions in the GaInAs layers were detected by using convergent-beam electron diffraction techniques.

Y.Atici: Journal of Crystal Growth, 1995, 156[3], 147-54