It was recalled that low-energy displacement events produced simple point defects such as Frenkel pairs. Computer simulations of these events were thought to be useful as they provided information concerning the nature of damage in semiconductors, and could generate the input parameters which were required for the theoretical study of cascades. By using molecular dynamics simulations, an investigation was made of low-energy displacement in these materials, for ejections below 32eV. The materials were modelled by using the Si Tersoff potential; which was modified in the case of the compound semiconductors. For each atomic species, the displacement threshold energy and its angular dependence was determined; together with an estimate of the recombination distance.

M.Sayed, J.H.Jefferson, A.B.Walker, A.G.Cullis: Nuclear Instruments and Methods in Physics Research B, 1995, 102[1-4], 232-5