The extent of interdiffusion in quantum-well structures, that had been grown by means of molecular beam epitaxy, was monitored by using photoluminescence techniques. Thermal annealing of as-grown and ion-implanted structures, in over-pressures of Cd or Te, provided clear evidence that diffusion was controlled by cation vacancies and were consistent with a strong dependence of the interdiffusion coefficient upon the vacancy concentration.

I.Karla, D.Shaw, W.E.Hagston, J.H.C.Hogg, S.Chalk, J.E.Nicholls, C.Peili: Journal of Applied Physics, 1996, 79[4], 1895-7