The effect of atomic H during the growth of undoped and N-doped material via photon-assisted molecular beam epitaxy was investigated. It was found that H incorporation was increased by the presence of N. Infra-red absorption data strongly suggested that the formation of N-H complexes occurred. Hall measurements indicated that the complexes were donor-like in nature. The hydrogenation also radically changed the low-temperature photoluminescence of both undoped and N-doped layers. The exciton-related luminescence was quenched at low temperatures. It was noted that N-related donor-acceptor pair luminescence was also absent from N-doped hydrogenated layers. This was consistent with complex formation. Finally, the Cu donor-acceptor pair luminescence appeared to be enhanced by H.

Z.Yu, S.L.Buczkowski, M.C.Petcu, N.C.Giles, T.H.Myers: Applied Physics Letters, 1996, 68[4], 529-31