The Te-related DX centers in Ga0.7Al0.3As0.02Sb0.98 layers were studied by using capacitance-voltage, deep-level transient spectroscopic, and direct capacitance transient techniques. A process of DX center ionization under high reverse bias conditions was observed at temperatures where thermal emission was negligible. The kinetics and reverse bias dependence of this process were analyzed. A mechanism was proposed which involved photon generation in high electric field regions, and subsequent photo-ionization of the DX center.

N.S.Terziev, P.Hubík, J.Krištofik, J.J.Mareš, V.Smíd, Y.P.Yakovlev: Journal of Applied Physics, 1996, 79[5], 2467-72