High-resolution electron microscopy was used to study the interaction of misfit dislocations, at the atomic scale, in molecular-beam epitaxial layers. The nature of Lomer dissociations was found to be very sensitive to the presence of neighboring 60 ones; thus resulting in dislocations, and delocalization of the extra {111} half-planes. The dissociation was also analyzed in terms of the equilibrium forces of nearby defects.

A.Vilà, A.Cornet, J.R.Morante: Applied Physics Letters, 1996, 68[9], 1244-6