The onset of misfit dislocation generation in [001] Ga0.8In0.2As/GaAs single heterostructures was investigated by means of transmission electron microscopy, using the lift-off technique. In order to determine the equilibrium critical thickness of misfit dislocation generation at various temperatures, post-growth annealing was carried out for 2h at 530 or 600C. The equilibrium critical thickness was deduced to be between 10 and 12nm for post-growth annealing at 530C, and between 6 and 8nm for post-growth annealing at 600C. Metastable dislocation structures could be disturbed by continued high-temperature exposure. A variability in the effect was attributed to variations in the extent of dislocation pinning.

J.Zou, D.J.H.Cockayne, B.F.Usher: Applied Physics Letters, 1996, 68[5], 673-4