It was recalled that previous observations of the high- and low-temperature phases of the (233)[011]   = 11 symmetrical tilt grain boundary in Si at 1470K ( = 11B) and 1220K ( = 11A) had been reported after deformation of a (122)[011]  = 9 grain boundary. Here, direct transformation of the (233)[011]  = 11 grain boundary in a  = 11 Ge bicrystal was described. It was noted that Si and Ge gave contradictory results.

M.Elkajbaji, J.Thibault, H.O.K.Kirchner: Philosophical Magazine Letters, 1996, 73[1], 5-10