Polishing damage in (100) wafers of liquid-encapsulated S-doped Czochralski material was investigated by monitoring photoluminescence from chemically angle-polished surfaces. The technique was shown to offer a good lateral resolution (less than 2) and good depth resolution (less than 10nm). It was found that the polishing damage extended to a depth of about 50nm. However, there was also a so-called good zone which extended to a depth of about 10nm; within which no damage was observed. The photoluminescence damage contrast was assumed to arise from dislocations and cracks.

Z.Laczik, G.R.Booker, A.Mowbray: Journal of Crystal Growth, 1996, 158[1-2], 37-42