Single crystals of S-doped material were deformed by compression, under dual and multi-slip conditions, at a shear strain-rate of about 2 x 10-5/s and an homologous temperature of about 0.4. The hardening curves exhibited a very different behavior to that of pure InP, although S did not have a net hardening effect at the yield point under the test conditions which were investigated. This was contrary to what was observed at higher temperatures. Transmission electron microscopic observations of deformed samples revealed the presence of extended stacking faults that were similar to those which were observed in pure InP. However, there were also numerous twins or micro-twins which were not observed in the latter case. The partial dislocation configurations suggested that pole mechanisms were operating. No evidence could be found that extrinsic stacking faults acted as twin nuclei.

M.Azzaz, J.P.Michel, A.George: Philosophical Magazine A, 1996, 73[3], 601-24