Deep-level transient spectroscopic measurements were performed on p-type monocrystals that were doped with Cd, As, Pb and P. Deep hole-trapping levels, which were located near to the middle of the energy gap, were detected. These levels were assumed to be associated with defects or defect complexes that were due to dopant atoms which precipitated within the inter-layers of the crystals.

R.Rella, P.Siciliano, A.Tepore: Materials Science Forum, 1996, 203, 65-70