The effect of the implanted species and dose upon the transient enhanced diffusion of a B marker layer was studied. It was found that, for lower implantation doses, the transient enhanced diffusion was species-independent. However, at higher implantation doses, the dependence of transient enhanced diffusion upon the species type became very marked. It was found that, at these higher doses (which included amorphization effects), the implantation of P caused greater transient enhanced diffusion than did implanted Si or As. This was explained on the basis of the fully-coupled diffusion mechanism for doped impurities, in which dopants diffused by temporarily pairing with point defects. In addition, both point defect clusters (and extended defects such as dislocations) significantly affected the evolution of both the implanted profile and of the buried marker layer. By modelling these effects, the experimental results were simulated and a consistent parameter set was found which fitted the data to a reasonable extent.

H.S.Chao, S.W.Crowder, P.B.Griffin, J.D.Plummer: Journal of Applied Physics, 1996, 79[5], 2352-63