A Monte Carlo study was made of B diffusion. The kick-out mechanism was considered for the case of a delta-function impurity profile under both inert and oxidation conditions. It was shown that the initial conditions played an important role in determining the mean migration path length of the atoms. The kick-out mechanism was examined analytically for the case of an initial delta-function interstitial impurity profile. The present atomic-level computations validated previous results on so-called intermittent B diffusion in Si. The pre-factor for the mean migration path-length was found to lie between 0.024 and 0.035nm.

M.M.De Souza, G.A.J.Amaratunga: Journal of Applied Physics, 1996, 79[5], 2418-25