The depth profiles of H which had been implanted into crystalline Si in random directions, to various fluences, were measured by using the 15N technique and secondary ion mass spectrometry. It was found that, whereas H which had been implanted to a fluence of 1015/cm2 exhibited limited mobility, no such mobility was observed after implantation at higher fluences. In these cases, ballistic computer models were found to describe the depth distributions to within experimental and theoretical accuracy. Annealing at temperatures of up to 510K did not change the H distribution. High-fluence H implantation into the oxide was also examined. There was some sign of radiation-enhanced diffusion during implantation. During subsequent thermal annealing, the H diffused; probably via a trapping/detrapping mechanism that was associated with an OH/H2 transformation of the H bonding.

D.Fink, J.Krauser, D.Nagengast, T.A.Murphy, J.Erxmeier, L.Palmetshofer, D.Braeunig, A.Weidinger: Applied Physics A, 1995, 61[4], 381-8