It was demonstrated here that it was possible to identify crystal defects by means of infra-red light-scattering tomography. Stacking faults with a central silicon oxide precipitate ere observed. They were identified by scattering of the surrounding Frank-type dislocation loop. The results were verified by changing the direction of the incident laser beam. Punching systems which had been identified by defect etching and transmission electron microscopy could be observed due to their characteristic defect arrangement.

G.Kissinger, J.Vanhellemont, C.Claeys, H.Richter: Journal of Crystal Growth, 1996, 158[3], 191-6