Plasma hydrogenation of Czochralski material was carried out in order to investigate the introduction of Si-O stretching modes and their relationship to thermal donor formation. It was found that plasma hydrogenation at 275C introduced a well-resolved vibrational absorption band at 1005/cm, while absorption due to the electronic excitation of thermal donors remained weak. This band was attributed to a Si-O precursor center for thermal donor formation, and it was suggested that this was the O dimer center that had been considered in other studies of O in Si. Vibrational modes which were introduced at 990 and 1000/cm, during post-hydrogenation furnace annealing at 400C, were related to the thermal donors, TD2 and TD3, respectively. The stretching frequencies for Si-O in thermal donor centers were compared with those for O aggregates in O-implanted and electron-irradiated Si.

H.J.Stein, J.W.Medernach: Journal of Applied Physics, 1996, 79[5], 2337-42