The electrical detection of electron nuclear double resonance was demonstrated with regard to shallow P donors. The resultant spectra were compared with conventional electron nuclear double resonance spectra. In the case of electrically detected electron nuclear double resonance, both the 31P hyperfine - as well as the 29Si superhyperfine - interaction could be resolved. The sensitivity of the electrically detected electron nuclear double resonance technique seemed to be greater when compared with conventional electron nuclear double resonance methods; especially in the case of 29Si ligands. The electrically detected electron nuclear double resonance technique was especially suitable for the study of the microscopic structure of point defects in semiconductors, and particularly for the detection of paramagnetic centers that were present at low concentrations and within small volumes.

B.Stich, S.Greulich-Weber, J.M.Spaeth: Applied Physics Letters, 1996, 68[8], 1102-4