A new atomistic approach to process simulation was presented which was based upon a Monte Carlo diffusion computer program; coupled to a binary collision program. As well as diffusion, the simulation took account of the recombination of vacancies and interstitials, clustering and re-emission from clusters, and the trapping of interstitials. The simulation was considered with regard to the typical room-temperature implantation of 40keV Si ions into (001)Si, to a dose of 5 x 1013/cm2, followed by high-temperature (815C) annealing. The damage consisted of an excess of interstitials, which was in the form of extended defects, and whose total number was similar to the implanted dose. This was suggested to explain the success of the so-called +1 model which was used to simulate the transient diffusion of dopants after ion implantation. It was also in agreement with recent transmission electron microscopic observations of the number of interstitials which were stored in (311) defects.

M.Jaraiz, G.H.Gilmer, J.M.Poate, T.D.De la Rubia: Applied Physics Letters, 1996, 68[3], 409-11