An investigation was made of the room-temperature diffusion and trapping of ion-generated point defects in crystalline Si. Point defects which were injected by low-energy Si, Ge or Pt implantation into bulk wafers were monitored by measuring the defect- induced dopant deactivation using spreading resistance profiling. Dopant deactivation was detected at depths which were several microns beyond the region that was directly affected by the ions. It was demonstrated that the long-range migration of Si self-interstitials was responsible for the observed phenomena.

K.K.Larsen, V.Privitera, S.Coffa, F.Priolo, S.U.Campisano, A.Carnera: Physical Review Letters, 1996, 76[9], 1493-6