A first tight-binding molecular dynamics simulation of the defect-induced crystal-to-amorphous transition in crystalline Si was presented. The process was studied by monitoring the response of the crystal lattice to the random insertion of self-interstitial defects. The structural and electronic properties were investigated, and were compared with those of amorphous material which had been obtained by quenching from the melt.

L.Colombo, D.Maric: Europhysics Letters, 1995, 29[8], 623-8