A model for the basic processes that were associated with solid-phase reactions on the surface was developed for structures such as M/Si, Si/SiO2 and Si/Si3N4. Analytical expressions were derived in order to estimate the elastic stresses, steady-state point-defect supersaturations and the activation energy for solid-phase reaction. Data were obtained which were related to the type of point defect that was generated during solid-phase reaction. A rule was proposed which predicted the phase formation sequence in systems with a polyphase constitutional diagram. In particular, it was shown that the steady-state supersaturation of the crystal, by self-interstitials during thermal oxidation, ranged from 2.4 to 4.4 at 1200C. However, the vacancy supersaturation during metal silicide formation varied from 102 to 107; depending upon the reaction type and temperature. The analytical results were compared with experimental data on the enhanced diffusion of impurities, and oxidation stacking-fault growth, and good agreement was found.

A.G.Italyantsev: Journal of Applied Physics, 1996, 79[5], 2369-75