The investigation of B diffusion in strained buried Se0.8Ge0.2 layers revealed a fractional interstitial component of the B diffusivity which was approximately equal to the equivalent value for Si. When combined with computer-simulated B profiles, the results placed an absolute lower bound of about 0.8 upon the fractional interstitial component for the present material. The method also provided a unique method for measuring the segregation coefficient. Thus, oxidation-enhanced diffusion was used instead of extended inert annealing in order to diffuse the dopant rapidly to equilibrium levels across the interface; thus permitting the segregation coefficient to be measured more quickly.

T.T.Fang, W.T.C.Fang, P.B.Griffin, J.D.Plummer: Applied Physics Letters, 1996, 68[6], 791-3