High-quality metastable pseudomorphic epilayers were grown by means of ultra-high vacuum chemical vapor deposition, using Si2H6 and GeH4. They were then implanted with 40keV B11+ or 100keV BF2+ ions to a dose of 1015/cm2, and annealed by using rapid thermal annealing (600, 650, 700 or 750C, 30s). Double-crystal X-ray diffractometry was used to evaluate the implantation-induced damage, and the damage-removal efficiency of both types of ion-implanted samples under the various rapid thermal annealing conditions. The results showed that rapid thermal annealing was more effective in removing damage from B11+-implanted samples than from BF2+-implanted samples.

L.P.Chen, T.C.Chou, C.H.Chien, C.Y.Chang: Applied Physics Letters, 1996, 68[2], 232-4