By using the crucible-free float-zone technique, monocrystals were grown, in the <111> direction, from Si-Ge solid solutions. No dislocations could be detected by using etch-pit density measurements, X-ray topography or infra-red transmission microscopy of Cu-decorated samples. The diameter was about 16mm, and the maximum Ge concentration was 5.4at%.

J.Wollweber, D.Schulz, W.Schröder: Journal of Crystal Growth, 1996, 158[1-2], 166-8