A method which involved the use of a low-temperature Si buffer layer was developed in order to grow SiGe epilayers, with a low density of dislocations, onto a Si substrate by means of molecular beam epitaxy. In this method, the low-temperature layer was used to release stress in the SiGe layer. The samples were investigated by using X-ray double-crystal diffractometry and transmission electron microscopy. The results indicated that the low-temperature layer was effective in releasing the stress, and in suppressing threading dislocations.

H.Chen, L.W.Guo, Q.Cui, Q.Hu, Q.Huang, J.M.Zhou: Journal of Applied Physics, 1996, 79[2], 1167-9