The predominant mobile species during silicide formation was identified by using a thin Ta layer as a marker. Data that were obtained concerning the formation of CoSi from Co2Si showed that monosilicide growth was essentially due to Si diffusion alone. When the method was used to study CoSi2 formation, the data indicated that Si was again the predominant mobile species during disilicide formation; although a not insignificant amount of Co diffusion also occurred.

C.M.Comrie, R.T.Newman: Journal of Applied Physics, 1996, 79[1], 153-6