Hall-effect and resistivity investigations were made of monocrystalline SixGe1-x samples with x-values of 0.03 or 0.23, and of polycrystalline samples with x-values of between 0.12 and 0.5. The samples were grown by using the Czochralski method. Defect arrangements in the samples were observed by means of preferential etching. When no impurity was deliberately added, the samples exhibited acceptor properties; with the carrier concentration increasing from 3 x 1014/cm3 for x = 0.03, to 1.35 x 1015/cm3 for x = 0.5. In monocrystals, the acceptor level was located near to Ev + 0.14eV.

T.R.Mchedlidze, I.Yonenaga, A.Matsui, K.Sumino: Materials Science Forum, 1995, 196-201, 353-8