The H passivation of Cd acceptors was studied by using perturbed angular correlation spectroscopy. After H implantation to 2 different levels, H-related complexes were observed at the Cd acceptors. One of these was the well-known Cd-H pair, oriented in the <111> direction (427MHz). Another complex (577MHz) also involved at least one H atom. It was routinely observed after high-energy H+ implantation (1keV) whereas, after low-energy H+ implantation (100eV), it appeared only in lightly (less than about 5 x 1017/cm3) Cd-doped InAs. The dissociation of this second complex resulted in an increase in the fraction of Cd-H pairs; thus indicating the transformation of this complex into Cd-H. The corresponding dissociation energy was about 1eV, as compared with 1.4eV for the Cd-H pair.

D.Forkel-Wirth, N.Achtziger, A.Burchard, J.C.Correia, M.Deicher, J.Grillenberger, H.Gottschalck, T.Licht, R.Magerle, U.Reislöhner, M.Rüb, M.Toulemonde, W.Witthuhn, Isolde: Materials Science Forum, 1995, 196-201, 963-8