Lattice defect structures at interfaces were studied by means of transmission electron microscopy. The InAs layers were grown using molecular beam epitaxy and various growth conditions. The latter permitted the growth mode to be changed from the usual Stranski-Krastanov mode to a layer-by-layer mode. The large misfit strain was relieved by island formation and by the introduction of dislocations near to the interface in the first mode, and by misfit dislocation formation alone in the second mode. The nature of the dislocations and their density at the interface depended upon the applied growth mode, which affected the dislocation generation and propagation mechanisms.

A.Trampert, E.Tournié, K.H.Ploog: Journal of Crystal Growth, 1995, 146[1-4], 368-73