The photoluminescence spectra were studied and were attributed to the InP antisite defect in undoped and Fe-doped semi-insulating material which had been bombarded with 30MeV electrons. In the case of Fe-doped samples, the 2 photoluminescence emissions were located at 0.03 and 0.117eV above the valence band. They annihilated within an annealing stage at 300 to 350C. The InP defects in undoped samples were about 100 times smaller than those which were produced in Fe-doped samples. In Fe-doped samples, an emission was also observed near to an emission that was related to the deep InP level. The defect which was produced was suggested to be a complex defect that consisted of an Fe impurity and an electron-induced P vacancy.

K.Kuriyama, K.Sakai, M.Okada, K.Yokoyama: Physical Review B, 1995, 52[20], 14578-81