The effects of Si3N4 films upon the anomalous enhanced diffusion of B, and upon extended defect formation, were studied in float-zone material during post-implantation annealing. Under Si3N4 films, the diffusion of B was retarded and stacking faults did not form after annealing. The results suggested that stress in the Si3N4 films decreased the self-interstitial concentration in Si near to the interface.

Y.Zaitsu, K.Osada, T.Shimizu, S.Matsumoto, M.Yoshida, E.Arai, T.Abe: Materials Science Forum, 1995, 196-201 1891-6