It was found that the annealing of electron-irradiated material at temperatures ranging from 150 to 400C led to the appearance of new defect complexes which contained O and a vacancy. The activation energy of these centers was analyzed, as was the dependence of annealing processes upon internal elastic strains.

L.I.Khirunenko, V.I.Shakhovtsov, V.I.Yashnik: Materials Science Forum, 1995, 196-201, 1385-8