Various impurities (Sb, As, Se, Fe) were implanted, using energies of some tens of keV, while using an isotope separator to prepare specimens with alloyed surface layers. Radioactive 111In probes, for the purpose of perturbed angular correlation spectroscopy, were implanted into the layers at room temperature. Upon annealing at temperatures above 973K, perturbed angular correlation modulation patterns were observed, for Sb, As and Se, which revealed that pairs which involved 111In and the impurity were formed. The period of the modulation pattern revealed a good agreement with the published value for Sb or As. The value for Se was found to be of the same order of magnitude as that for Sb and As. In the case of Fe, a modulation pattern with a small amplitude and a period of 18ns was found after annealing at 573 to 673K. The stabilities of pairs, impurities and probe atoms were explained in terms of the heat of solution and the diffusion activation energy of an impurity in Si.

R.Hanada, T.Shinozuka, M.Fujioka: Materials Science Forum, 1995, 196-201, 1369-74