The behavior of open-volume defects which were introduced by the ion implantation of (100) samples was investigated by means of variable-energy positron annihilation spectroscopy. The depth distribution of the open-volume defects depended upon the ion which was implanted. In the case of B implantation, the distribution was consistent with the results of Monte Carlo simulations, whereas open-volume defects were produced by Si, P or As ions which were implanted deeper than their projected ranges. The defect behaviors in Si- or P-implanted material during annealing were very different to those for B or As implantation. In the case of Si or P implantation, the clustering of vacancy-O complexes appeared to occur during annealing at low or moderate temperatures.

M.Fujinami, S.Hayashi: Materials Science Forum, 1995, 196-201, 1165-70