The secondary defects and deep levels which were introduced by high-energy P ion implantation were studied. Deep-level transient spectroscopic measurements revealed 2 electron traps in n-type material. The thermal activation energies of the 2 traps were 0.32eV (E1) and 0.49eV (E2). Transmission electron microscopic and secondary ion mass spectrometric measurements revealed a strong gettering effect of O atoms in P-implanted samples.

S.Tatsukawa, Y.Nakahara, S.Matsumoto: Materials Science Forum, 1995, 196-201 1875-80