The irradiation-temperature dependence of residual defects in 17MeV proton-bombarded material was deduced from the fluence dependences of the dark- and photo-conductivity. The ratio of residual to primary defects decreased step-wise with increasing temperature. The temperature variation of the residual defects corresponded to defect recovery stages, but the entire variation shifted to the low-temperature side of that for post-irradiation annealing. This indicated that dynamic effects under irradiation played an important role in producing residual defects. Electron-hole excitation and a continuous supply of point defects were considered as possible mechanisms.

H.Amekura, N.Kishimoto, K.Kono, T.Saito: Materials Science Forum, 1995, 196-201, 1159-64