Electron beam-induced current recombination contrast data were used to analyze the extent of the recombination-active region around defects. Small NiSi2 platelets in n-type material were found to exhibit so-called internal Schottky barriers in which the surrounding depletion zone could be approximated by a zero-lifetime (black) region. The active region of dislocations was explained in terms of the black-cylinder approximation.

M.Kittler, W.Seifert: Materials Science Forum, 1995, 196-201, 1123-8