The recombination activities of deformation-induced glide dislocations and faulted dipoles were investigated by using the electron beam-induced current technique. After deducing the depth of the defects from their electron beam-induced current profile, the temperature dependences of the electron beam-induced current contrast of the defects were studied in order to deduce their energy levels. The temperature dependences of the diffusion constant and the diffusion lengths of minority carriers were also taken into account. It was concluded that both 60 and screw dislocations had 2 levels at about 0.06eV from the conduction and valence band edges. A faulted dipole had 2 shallow levels at 0.09eV, and 2 deep levels at 0.25eV from both band edges.

S.Kusanagi, T.Sekiguchi, K.Sumino: Materials Science Forum, 1995, 196-201, 1195-200