Loops which consisted of long and straight segments of 60 and screw portions were introduced into p-type material by deformation under high stresses at low temperatures. The electronic states which were associated with such dislocations were investigated by means of electric-dipole spin resonance, with and without photo-excitation. The effect of relaxation in the shape of dislocations, due to annealing, was also investigated. All of the experimental results could be explained consistently in terms of a model which assumed that the straight parts of dislocations accompanied shallow 1-dimensional energy bands which were split from the valence and conduction bands of crystals by about 0.08eV.

V.Kveder, T.Sekiguchi, K.Sumino: Materials Science Forum, 1995, 196-201, 1189-94