The generation kinetics and surface morphology of crystallographic defects were investigated on (111) vicinal surfaces which had been grown by the use of SiH2Cl2. By means of chemical etching it was found that, on a (111) 0-off surface with a small misorientation angle, the crystallographic defect always developed as a pyramidal hillock with various apex morphologies; depending upon the type of defect. Dislocations, stacking faults and polycrystalline material were associated with hillocks with sharp and flat apices and bright particles, respectively. However, no hillocks were observed on (111) 4-surfaces with a large step density; regardless of the existence of such defects. This marked change in the surface morphology of the crystallographic defect indicated that the latter could play the role of a growth nucleus for a hillock with a high growth rate on the (111) 0-off surface; leading to the growth of a triangular hillock, regardless of the defect type. It was therefore concluded that, even without chemical etching of the as-grown surface, the pyramidal hillock could be used as a so-called fingerprint of a crystallographic defect; with the exact type being distinguished by paying attention to the apex morphology. Crystallographic defect generation was observed to be hardly affected by increases in the step density, in spite of the sudden disappearance of the corresponding hillock.

M.K.Mazumder, Y.Mashiko, M.H.Koyama, Y.Takakuwa, N.Miyamoto: Journal of Crystal Growth, 1995, 155[3-4], 183-92