It was noted that an abrupt change in crystal growth rate at temperatures ranging from 1423 to 1353K affected the annihilation or agglomeration of grown-in defects such as flow pattern defects, laser scattering defects, and the defects which were detected by optical precipitate profiling. It was demonstrated that the densities of flow pattern defects and laser scattering defects were related to each other and also to the cooling rate within the above temperature range. These relationships were investigated by growing monocrystals in 10 types of hot-zone structure which had been designed by means of numerical simulation. The cooling rate from 1685K (the melting point of Si) to 1423K did not seem to be so important for the generation or annihilation of these defects.

K.Takano, K.Kitagawa, E.Iino, M.Kimura, H.Yamagishi: Materials Science Forum, 1995, 196-201, 1707-12