The nature of D defects in Czochralski material, including their dissolution thermodynamics and kinetics, was investigated. After dry oxidation (1200C, 2h), the D defect density decreased, with depth below the surface, to some critical depth which was determined by the injection rate of interstitial Si atoms. It then increased towards the density of the as-grown wafer. During oxidation, the D defect density profile exactly parallelled the vacancy concentration profile; thus indicating that the driving force for D defect dissolution was a vacancy undersaturation that was caused by annihilation between injected interstitial Si atoms and vacancies in the matrix.

J.G.Park, J.K.Jung, K.C.Cho, G.A.Rozgonyi: Materials Science Forum, 1995, 196-201, 1697-706