The fundamentals of the aggregation and dissolution of crystal-originated defects in Czochralski material were studied. On the basis of the present analysis, it was proposed that vacancy aggregation involved an intricate coupling between the capture process of Si interstitials and O atoms by vacancy agglomerates, and the evolution of the defect agglomerates. The thermodynamic stability of the crystal-originated defects, and therefore the dissolution phenomena, depended upon the crystal growth rate. This governed both the generation rate of vacancy agglomerates and the capture of point defects by the vacancy agglomerates.

W.Wijaranakula: Materials Science Forum, 1995, 196-201, 1691-6